november 2011 fdd5n50nz n-channel mosfet ?2011 fairchild semiconductor corporation fdd5n50nz rev. c0 www.fairchildsemi.com 1 unifet-ii tm mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter fdd5n50nz units v dss drain to source voltage 500 v v gss gate to source voltage 25 v i d drain current -continuous (t c = 25 o c) 4 a -continuous (t c = 100 o c) 2.4 i dm drain current - pulsed (note 1) 16 a e as single pulsed avalanche energy (note 2) 304 mj i ar avalanche current (note 1) 4 a e ar repetitive avalanche energy (note 1) 6.2 mj dv/dt peak diode recovery dv/dt (note 3) 10 v/ns p d power dissipation (t c = 25 o c) 62 w - derate above 25 o c 0.5 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdd5n50nz units r ? jc thermal resistance, junction to case 2.0 o c/w r ? ja thermal resistance, junction to ambient 90 fdd5n50nz n-channel mosfet 500v, 4a, 1.5 ? features ?r ds(on) = 1.38 ? ( typ.)@ v gs = 10v, i d = 2a ? low gate charge ( typ. 9nc) ? low c rss ( typ. 4pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? esd imoroved capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switching mode power supplies and active power factor correction. g s d d-pak *drain current limited by maximum junction temperature
fdd5n50nz n-channel mosfet fdd5n50nz rev. c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quantity fdd5n50nz FDD5N50NZTM d-pak 380mm 16mm 2500 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 ? a, v gs = 0v, t j = 25 o c 500 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 o c - 0.5 - v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 1 ? a v ds = 400v, t c = 125 o c--10 i gss gate to body leakage current v gs = 25v, v ds = 0v - - 10 ? a v gs(th) gate threshold voltage v gs = v ds , i d = 250 ? a 3.0 - 5.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 2a - 1.38 1.5 ? g fs forward transconductance v ds = 20v, i d = 2a (note 4) - 3.54 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 330 440 pf c oss output capacitance - 50 70 pf c rss reverse transfer capacitance - 4 6 pf q g(tot) total gate charge at 10v v ds = 400v i d = 4a v gs = 10v (note 4, 5) - 9 12 nc q gs gate to source gate charge - 2 - nc q gd gate to drain ?miller? charge - 4 - nc t d(on) turn-on delay time v dd = 250v, i d = 4a v gs = 10v, r g = 25 ? (note 4, 5) -1235ns t r turn-on rise time - 22 55 ns t d(off) turn-off delay time - 28 65 ns t f turn-off fall time - 21 50 ns i s maximum continuous drain to source diode forward current - - 4 a i sm maximum pulsed drain to source diode forward current - - 16 a v sd drain to source diode forward voltage v gs = 0v, i sd = 4a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 4a di f /dt = 100a/ ? s (note 4) - 210 - ns q rr reverse recovery charge - 1.1 - ? c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 38mh, i as = 4a, v dd = 50v, r g = 25 ? , starting t j = 25 ? c 3. i sd ?? 4a, di/dt ? 200a/ ? s, v dd ? bv dss , starting t j = 25 ? c 4. pulse test: pulse width ? 300 ? s, dual cycle ? 2% 5. essentially independent of operating temperature typical characteristics
fdd5n50nz n-channel mosfet fdd5n50nz rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics
fdd5n50nz n-channel mosfet fdd5n50nz rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve t 1 p dm t 2
fdd5n50nz n-channel mosfet fdd5n50nz rev. c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdd5n50nz n-channel mosfet fdd5n50nz rev. c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms
fdd5n50nz n-channel mosfet fdd5n50nz rev. c0 www.fairchildsemi.com 7 mechanical dimensions d-pak dimensions in millimeters
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uhc ? ultra frfet? unifet? vcx? visualmax? xs? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect o urselves and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directl y from fairchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild dire ctly or from authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i55
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